NDS356 查看數據表（PDF） - Fairchild Semiconductor

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NDS356

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics (continued)

1.08

1.06

ID = -250µA

1.04

1.02

1

0.98

0.96

-50

-25

0

25

50

75

100 125 150

T J , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation with

Temperature

10

V GS = 0V

2

1 TJ = 125°C

0.5

0.2

0.1

25°C

-55°C

0.01

0.001

-0.3

-0.6

-0.9

-1.2

-1.5

-1.8

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation with

Source Current and Temperature

700

500

300

200

100

50

30

0.1

Ciss

Coss

f = 1 MHz

VGS = 0 V

Crss

0.2

0.5

1

2

5

10

20

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 9. Capacitance Characteristics

-10

I = -1.1 A

D

-8

-6

V = -5 V

DS

-10

-4

-2

0

0

1

2

3

4

5

6

7

Q g , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics

VIN

VGS

RGEN

G

VDD

RL

D

V OUT

DUT

S

Figure 11. Switching Test Circuit

t d(on)

ton

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

50%

PULSE WIDTH

INVERTED

Figure 12. Switching Waveforms

NDS356P Rev. E1

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