NDS352AP 查看數據表（PDF） - Fairchild Semiconductor

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NDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics

-5 VGS = -10V -7.0 -6.0

-5.5

-4

-5.0

-4.5

-3

-4.0

-2

-3.5

-1

-3.0

0

0

-1

-2

-3

-4

-5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

ID = -0.9A

1.4 V GS = -4.5V

1.2

1

0.8

0.6

-50

-25

0

25

50

75

100

125

150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

with Temperature.

-4

VDS = -10V

-3.2

-2.4

-1.6

-0.8

T = -55°C

J

25

125

-1

-2

-3

-4

-5

-6

VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

1.6

VGS = -3.5 V

1.4

-4.0

1.2

-4.5

-5.0

1

-5.5

-6.0

0.8

-7.0

0.6

-10

0.4

0

-1

-2

-3

-4

-5

I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.6

1.4

TJ = 125°C

1.2

1

25°C

0.8

-55°C

0.6

0.4

0.2

0

VGS = -4.5V

-1

-2

-3

-4

I D , DRAIN CURRENT (A)

Figure 4. On-Resistance Variation

with Drain Current and Temperature.

1.2

1.1

1

0.9

0.8

0.7

-50 -25

0

25

50

75 100 125 150

T , JUNCTION TEMPERATURE (°C)

Figure 6. Gate Threshold Variation

with Temperature.

NDS352AP Rev.C

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