NDT451N 查看數據表（PDF） - Fairchild Semiconductor

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NDT451N

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

VDS = 24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS= 0 V

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 5.5 A

ID(on)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VGS = 4.5 V, ID = 4.3 A

VGS = 10 V, VDS = 5 V

VGS = 4.5 V, VDS = 5 V

VDS = 10 V, ID = 5.5 A

VDS = 10 V, VGS = 0 V,

f = 1.0 MHz

VDD = 15 V, ID = 1.0 A,

VGEN = 10 V, RGEN = 6 Ω

VDS = 10 V,

ID = 5.5 A, VGS = 10 V

Min Typ Max Units

30

TJ = 55°C

V

2

µA

20 µA

100 nA

-100 nA

1

1.6

3

V

TJ = 125°C 0.7 1.2 2.2

0.042 0.05 Ω

TJ = 125°C

0.065 0.1

0.064 0.08

18

A

15

6

S

730

pF

370

pF

140

pF

20

30

ns

15 25 ns

19 40 ns

10 30 ns

16 25 nC

1.8

3

nC

4.5

7

nC

NDT451N Rev. C2

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