NDT451N 查看數據表（PDF） - Fairchild Semiconductor
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NDT451N Datasheet PDF : 10 Pages
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Typical Electrical Characteristics (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
V = 0V
5
GS
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
2000
1000
C iss
10
ID = 5.5A
VDS = 10V
8
500
C oss
6
200
100
f = 1 MHz
V GS = 0V
4
C rss
2
50
0
0.1 0.2
0.5
1
2
5
10
20 30
0
4
8
12
16
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDT451N Rev. C2
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