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NDT456 查看數據表(PDF) - Fairchild Semiconductor

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NDT456 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Typical Electrical Characteristics
-20
VGS = -10V
-6.0
-16 -5.0
-4.5
-4.0
-3.5
-12
-3.0
-8
-4
-2.5
0
0
-1
-2
-3
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1 .5
1 .2 5
I D =-7.5A
V = -10V
GS
1
0 .7 5
0 .5
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
2.5
V GS=-3.5V
2
1.5
1
-4.0
-4.5
-5.0
-7.0
-10
0.5
0
-4
-8
-12
-16
-20
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2.5
VGS = -10V
2
1.5
TJ = 125°C
1
0.5
25°C
-55°C
0
0
-4
-8
-12
-16
-20
ID , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
-20
VDS =- 10V
-16
TJ = -55°C 25
125
-12
-8
-4
0
-0.8
-1.6
-2.4
-3.2
-4
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
1.2
VDS = VGS
1.1
ID =- 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEM PERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
NDT456P Rev. F

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