NDT01N60T1G 查看數據表（PDF） - ON Semiconductor
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NDT01N60T1G Datasheet PDF : 8 Pages
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NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
1.0
VGS = 10 V 5.5 V
0.8
TJ = 25°C
0.6
4.8 V
4.6 V
0.4
0.2
0
0
4.4 V
4.2 V
4.0 V
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
2.0
VDS ≥ 25 V
1.6
1.2
TJ = 25°C
0.8
TJ = 125°C
0.4
TJ = −55°C
0
23
45
6
7
8
9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
10
16
9.5
9.0
ID = 200 mA
TJ = 25°C
14
VGS = 10 V
TJ = 25°C
8.5
12
8.0
7.5
7.0
6.5
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
2.4
2.0
ID = 200 mA
VGS = 10 V
1.6
10
8
6
0
0.5
1.0
1.5
2.0
2.5 3.0
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
1.2
TJ = 125°C
100
0.8
0.4
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0
100
200
300
400
500 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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