NDT01N60T1G 查看數據表（PDF） - ON Semiconductor

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NDT01N60T1G

N-Channel Power MOSFET 600 V, 8.5 Ω

ON Semiconductor 

NDD01N60, NDT01N60

TYPICAL CHARACTERISTICS

10

50% Duty Cycle

1 20%

10%

5%

2%

0.1

1%

Single Pulse

0.01

0.000001 0.00001 0.0001

0.001

0.01

0.1

1

10

PULSE TIME (sec)

Figure 13. Thermal Impedance (Junction−to−Case) for NDD01N60

100

50% Duty Cycle

20%

10 10%

5%

2%

1 1%

100

1000

0.1

Single Pulse

0.01

0.000001 0.00001 0.0001

0.001

0.01

0.1

1

10

100

1000

PULSE TIME (sec)

Figure 14. Thermal Impedance (Junction−to−Ambient) for NDT01N60

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5

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