NE5210D 查看數據表（PDF） - Philips Electronics
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NE5210D Datasheet PDF : 14 Pages
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Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
AC ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
Min
VOMAX
Maximum output voltage swing dif-
ferential
RL=∞
Test Circuit 8, Procedure 3
2.4
VINMAX
Maximum input amplitude for
output duty cycle of 50±5%3
Test Circuit 7
650
tR
Rise time for 50 mVP-P
output signal4
Test Circuit 7
LIMITS
Typ
3.2
0.8
Max
1.2
UNIT
VP-P
mVP-P
ns
NOTES:
1. Package parasitic capacitance amounts to about 0.2pF
2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC line.
3. Guaranteed by linearity and overload tests.
4. tR defined as 20-80% rise time. It is guaranteed by a -3dB bandwidth test.
TEST CIRCUITS
NETWORK ANALYZER
SINGLE-ENDED
DIFFERENTIAL
VOUT
RT [ VIN R + 2 @ S21 @ R
VOUT
RT + VIN R + 4 @ S21 @ R
S-PARAMETER TEST SET
PORT 1
PORT 2
Ť Ť 1 ) S22
RO [ ZO 1 * S22 * 33
ZO = 50
5V
VCC1 VCC2
0.1µF
50
OUT
R = 1k
IN DUT
OUT
0.1µF
33
33 0.1µF
GND1
GND2
ZO = 50
RL = 50
Ť Ť 1 ) S22
RO + 2ZO 1 * S22 * 66
Test Circuit 1
SPECTRUM ANALYZER
5V
VCC1 VCC2
AV = 60DB
OUT
0.1µF
33
ZO = 50
NC
IN DUT
33 0.1µF
OUT
RL = 50
GND1
GND2
Test Circuit 2
SD00319
1995 Apr 26
3
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