NE85639R 查看數據表（PDF） - NEC => Renesas Technology
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NE85639R Datasheet PDF : 25 Pages
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ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
VCBO
Collector to Base Voltage
VCEO Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC
Collector Current
TJ
Junction Temperature
TSTG
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
20
12
3.0
100
1502
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in
permanent damage.
2. Maximum TJ for the NE85600 and NE85635 is 200°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE85633 AND NE85635
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
NE85635
200
NE85633
100
0
0
50
100
150
200
Ambient Temperature, TA (°C)
COLLECTOR TO BASE
CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
5.0
3.0
2.0
1.0
NE85634
0.7
NE85632/
0.5
33
NE85635
0.3
0.2
0.1
1
2 3 5 7 10
20 30 50
Collector to Base Voltage, VCB (V)
NE856 SERIES
NE85632 AND NE85634
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2.4
2.0
Aluminum
Heat Sink
for NE85632
1.6
NE85634
Ceramic Substrate
2.5 cm2 X 0.7 mm
RTH (J-A) = 62.5˚C/W
10
1.2
3.8
0.8 NE85632
Free Air
7.8
NE85632
with Heat
Sink
0.4
NE85634
Free Air
0
0
50
100
150
Ambient Temperature, TA (°C)
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500
VCE = 10 V
300
200
100
70
50
30
20
10
1
2 3 5 7 10
20 30 50
Collector Current, IC (mA)
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