NE85635 查看數據表（PDF） - NEC => Renesas Technology
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NE85635 Datasheet PDF : 25 Pages
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NE856 SERIES
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
NE85634
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
25
VCE = 10 V
IC = 20 mA
20
15
MAG
10
|S21E| 2
5
0
0.1
0.2 0.3
0.5 0.7 1.0
2.0
Frequency, f (GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 10 V
7
NE85633
NE85635
NE85632
5
NE85634
3
2
1
1
2 3 5 7 10 20 30 50 70 100
Collector Current, IC (mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
16
VCE = 10 V
f = 1 GHz
14
NE85633
12
NE85632
10
NE85634
8
6
4
1
2 3 5 7 10
20 30 50 70 100
Collector Current, IC (mA)
NE85635
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
25
VCE = 10 V
IC = 20 mA
20
15
MAG
10
5
|S21E| 2
0
-5
0.1
0.2 0.3 0.5
1
2
Frequency, f (GHz)
5 10
NE85632 AND NE85634
INTERMODULATION DISTORTION
vs. COLLECTOR CURRENT
-80
IM3
-70
VCE = 10 V
VO = 100 dBµV/50 Ω
RG = RL = 50 Ω
-60
IM2
-50
-40
IM2 f = 90 + 100 MHz
IM3 f = 2 X 200-190 MHz
-30
20
30
40
50
60
70
Collector Current, IC (mA)
NE85635
INSERTION GAIN vs.
COLLECTOR CURRENT
24
VCE = 10 V
20
f = 500 MHz
f = 1 GHz
16
12
f = 2 GHz
8
4
0
1
2
5
10 20
50 100
Collector Current, IC (mA)
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