NIS5112(2006) 查看數據表（PDF） - ON Semiconductor

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NIS5112
(Rev.:2006)

Electronic Fuse

ON Semiconductor 

NIS5112

There is an inherent delay in the turn on of the electronic

fuse, due to the method of gate drive used. The gate of the

power FET is charged through a high impedance resistor,

and from the time that the gate starts charging until the time

that it reaches its threshold voltage, there will be no

conduction. Once the gate reaches its threshold voltage, the

output current will begin a controlled ramp up phase.

This delay will be added to any timing delay due to the

enable/timer circuit. Figure 8 shows a simplified diagram of

the enable/timer circuit.

Enable/

Timer

80 mA

+

Enabled

2.5 V

−

Thermal Protection Circuit

The temperature limit circuit senses the temperature of the

Power FET and removes the gate drive if the maximum level

is exceeded. The NIS5112 device has two different thermal

limit versions, auto−retry and latch off.

Auto−Retry Version

The device will shut down when the thermal limit

threshold is reached (TJ = 135°C, typical) and will not turn

back on until the die temperature reduces down to 95°C

(40°C hysteresis, typical). It will keep auto−retrying until

the fault condition is removed or power is turned−off.

Latch−Off Version

For the latch−off version, the device will shut down when

the thermal limit threshold is reached (TJ = 135°C, typical)

and will remain off until power is reset.

Figure 8. Simplified Schematic Diagram of the

Enable/Timer Circuit

http://onsemi.com

8

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