HUFA75531SK8T 查看數據表（PDF） - Fairchild Semiconductor
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HUFA75531SK8T Datasheet PDF : 11 Pages
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HUFA75531SK8
Typical Performance Curves (Continued)
200
100
RθJA = 50oC/W
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
0.1
1ms
10ms
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
200
If R = 0
100
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 VDD = 15V
20
15
10
TJ = 150oC
TJ = -55oC
5
TJ = 25oC
0
2.0
3.0
4.0
5.0
6.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 6A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
30
VGS = 20V
VGS = 10V
25
VGS =5V
20
VGS = 7V
15
VGS = 6V
10
5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA75531SK8 Rev. B
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