NLSX3012 查看數據表（PDF） - ON Semiconductor

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NLSX3012

2-Bit 100 Mb/s Configurable Dual-Supply Level Translator

ON Semiconductor 

NLSX3012

MAXIMUM RATINGS

Symbol

Parameter

Value

Condition

Unit

VCC

VCC Supply Voltage

−0.5 to +5.5

V

VL

VL Supply Voltage

−0.5 to +5.5

V

I/O VCC VCC−Referenced DC Input/Output Voltage

−0.5 to (VCC + 0.3)

V

I/O VL VL−Referenced DC Input/Output Voltage

−0.5 to (VL + 0.3)

V

VEN

Enable Control Pin DC Input Voltage

−0.5 to +5.5

V

IIK

Input Diode Clamp Current

−50

VI < GND

mA

IOK

Output Diode Clamp Current

−50

VO < GND

mA

ICC

DC Supply Current Through VCC

$100

mA

IL

DC Supply Current Through VL

$100

mA

IGND

DC Ground Current Through Ground Pin

$100

mA

TSTG

Storage Temperature

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

VCC

VCC Supply Voltage

VL

VL Supply Voltage

VEN

Enable Control Pin Voltage

VIO

Bus Input/Output Voltage

TA

DI/DV

Operating Temperature Range

Input Transition Rise or Rate

VI, VIO from 30% to 70% of VCC; VCC = 3.3 V $ 0.3 V

I/O VCC

I/O VL

Min

1.3

0.9

GND

GND

GND

−40

0

Max

Unit

4.5

V

VCC − 0.4

V

4.5

V

4.5

V

4.5

+85

°C

10

ns

+1.8V

VL

+3.6V

P

VCC

One−Shot

4 kW

+1.8 V System

VL

VCC

NLSX3012

+3.6 V System

I/O VL

N

One−Shot

I/O VCC

I/O1

I/O2

GND EN

I/O VL1 I/O VCC1

I/O VL2 I/O VCC2

EN GND

I/O1

I/O2

GND

P

One−Shot

4 kW

N

One−Shot

Figure 1. Typical Application Circuit

Figure 2. Simplified Functional Diagram (1 I/O Line)

(EN = 1)

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