NP50P06KDG 查看數據表（PDF） - NEC => Renesas Technology
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NP50P06KDG Datasheet PDF : 7 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP50P06KDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP50P06KDG-E1-AY Note
NP50P06KDG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZK)
FEATURES
• Super low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A)
RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
• Low input capacitance
Ciss = 5000 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current Note2
IAS
Single Avalanche Energy Note2
EAS
−60
V
m20
V
m50
A
m150
A
90
W
1.8
W
175
°C
−55 to +175 °C
32
A
106
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.67
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18689EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
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