NTE234 查看數據表（PDF） - NTE Electronics

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NTE234

Silicon PNP Transistor Low Noise, High Gain Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Saturation Voltage

Collector–to–Emitter

VCE(sat) IC = 10mA, IB = 1mA

– – 0.3 V

Base–to–Emitter Voltage

VBE VCE = 6V, IC = 2mA

– 0.65 – V

Transition Frequency

Collector Output Capacitance

Noise Figure

fT

VCE = 6V, IC = 1mA

Cob VCB = 10V, IE = 0, f = 1MHz

NF VCE = 6V, IC = 100µA,

f = 10Hz, Rg = 10kΩ

VCE = 6V, IC = 100µA,

f = 1Hz, Rg = 10kΩ

VCE = 6V, IC = 100µA,

f = 1Hz, Rg = 100kΩ

– 100

–4

––

– MHz

– pF

6 dB

–– 2

–3 –

.135 (3.45) Min

.210

(5.33)

Max

Seating Plane

.500

(12.7)

Min

.021 (.445) Dia Max

.100 (2.54)

ECB

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165

(4.2)

Max

.105 (2.67) Max

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