NTE24 查看數據表（PDF） - NTE Electronics

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NTE24

Silicon Complementary Transistors General Purpose Amplifier, Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage

VCE(sat) IC = 500mA, IB = 50mA

IC = 1000mA, IB = 100mA

–

– 0.5 V

–

– 1.5 V

Base–Emitter ON Voltage

VBE(on) VCE = 2V, IC = 1000mA

–

– 0.5 V

Current Gain Bandwidth Product

Output Capacitance

fT

VCE = 5V, IC = 200mA, f = 100MHz 50

–

– MHz

Cob VCB = 10V, IE = 0, f = 1MHz

–

– 30 pF

.200 (5.08)

.180 (4.57)

.100 (2.54)

ECB

.180

(4.57)

.594

(15.09)

.018 (0.46)

.050 (1.27)

.015 (0.38)

3.050 (1.27)

.050 (1.27)

.140

(3.55)

.090 (2.28) R

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