NTE2662 查看數據表（PDF） - NTE Electronics

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NTE2662

Silicon NPN Transistor High Frequency, Low Noise RF

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Noise Figure

Reverse Transfer Capacitance

NF VCE = 1V, IC = 10mA, f = 2GHz

−

CRE VCB = 0.5V, IE = 0mA, f = MHz, Note 4 −

1.9 2.5 dB

0.6 0.8 pF

Collector Cutoff Current

Emitter Cutoff Current

ICBO

IEBO

VCB = 5V, IE = 0

VEB = 1, IC = 0

− − 600 nA

− − 600 nA

DC Current Gain

hFE VCE = 1V, IC = 5mA, Note 3

100 120 145

Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%.

Note 4. Collector−to−Base capacitance when the emitter is grounded.

.004

(0.10)

.008 (0.20)

.005 (0.125)

.004

(0.10)

B

C

E

.020

(0.50)

.027

(0.70)

.006 (0.15)

.027 (0.70)

.039 (1.0)

.006 (0.15)

.020 (0.50)

.012

(0.30)

.008 (0.20)

.008 (0.20)

.014 (0.35)

.014 (0.35)

(Bottom View)

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