NTE295 查看數據表（PDF） - NTE Electronics

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NTE295

Silicon NPN Transistor RF Power Output, Driver

NTE Electronics 

NTE295

Silicon NPN Transistor

RF Power Output, Driver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A

Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Emitter Cutoff Current

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

DC Current Gain

Current Gain Bandwidth Product

ICBO VCB = 40V, IE = 0

IEBO VEB = 4V, IC = 0

V(BR)CBO IC = 10µA, IE = 0

V(BR)CER IC = 1mA, RBE = 150Ω

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 10µA, IC = 0

hFE VCE = 5V, IC = 500mA

fT

VCE = 10V, IC = 50mA

–

– 1.0 µA

–

– 1.0 µA

75 –

–

V

75 –

–

V

45 –

–

V

5

–

–

V

60 – 320

180 250 –

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Output Capacitance

Output Power

Collector Efficiency

VCE(sat) IC = 500mA, IB = 50mA

– 0.2 0.6 V

VBE(sat) IC = 500mA, IB = 50mA

– 0.9 1.2 V

Cob VCB = 10V, f = 1MHz

– 15 25 pF

PO VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 –

W

η

60 –

–

%

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