NTE329 查看數據表（PDF） - NTE Electronics

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NTE329

Silicon NPN Transistor RF Power Amp, CB

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Functional Test

Common–Emitter Amplifier Power Gain GPE POUT = 3.5W, VCC = 12.5V, f = 27MHz 10 – – dB

Collector Efficiency

η

POUT = 3.5W, VCC = 12.5V, f = 27MHz, 62.5 70.0 – %

Note 3

Percent Up–Modulation

– f = 27MHz, Note 2

– 85 – %

Parallel Equivalent Input Resistance

Parallel Equivalent Input Capacitance

Parallel Equivalent Output Capaciatnce

Rin POUT = 3.5W, VCC = 12.5V, f = 27MHz

Cin POUT = 3.5W, VCC = 12.5V, f = 27MHz

Cout POUT = 3.5W, VCC = 12.5V, f = 27MHz

– 21 – Ω

– 900 – pF

– 200 – pF

Note 2. η = RF POUT
100

(VCC) (IC)

Note 3. Percentage Up–Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with

VCC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after

doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther-

mal considerations) and raising the VCC to 25Vdc (to simulate the modulating voltage). Per-

centage Up–Modulation is then determined by the relation:

Percentage Up–Modulation = (PEP) 1/2–1
100

PC

.260

(6.6)

Max

.500

(12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter

.018 (0.45)

Base

Collector/Case

45°

.031 (.793)

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