NTE344 查看數據表（PDF） - NTE Electronics
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NTE344 Datasheet PDF : 2 Pages
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NTE344
Silicon NPN Transistor
RF Power Output
PO = 30W @ 175MHz
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +175°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Units
Collector−Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0
35 −
−
V
Emitter−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
V(BR)EBO IE = 10mA, IC = 0
V(BR)CEO IC = 100mA, RBE = ∞
4
−
−
V
17 −
−
V
Collector Cut−Off Current
ICBO VCB = 25V, IE = 0
−
−
2 mA
Emitter Cutoff Current
IEBO VEB = 3V, IC = 0
−
−
1 mA
DC Current Gain
hFE VCE = 10V, IC = 0.2A
10 50 180 −
Amplifier Power Out
Collector Efficiency
PO VCC 13.5V, f = 175MHz, Pin = 6W
28 32
−
W
ηC VCC = 13.5V, f = 175MHz, Pin = 6W 60 70
−
%
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