NTE392 查看數據表（PDF） - NTE Electronics

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NTE392

Silicon Complementary Transistors General Purpose

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2

Collector–Emitter Cutoff Current

ICEO VCE = 60V, IB = 0

ICES VCE = 100V, VEB = 0

Emitter–Base Cutoff Current

IEBO VEB = 5V, IC = 0

ON Characteristics (Note 2)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

IC = 1.5A, VCE = 4V

IC = 15A, VCE = 4V

IC = 15A, IB = 1.5A

IC = 25A, IB = 5A

IC = 15A, VCE = 4V

IC = 25A, VCE = 4V

Small–Signal Current Gain

Current–Gain Bandwidth Product

hfe IC = 1A, VCE = 10V, f = 1kHz

fT IC = 1A, VCE = 10V,

f = 1MHz, Note 3

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

Note 3. fT = |hfe|  ftest

Min Typ Max Unit

100 – – V

– – 1 mA

– – 0.7 mA

– – 1 mA

25 – –

15 – 75

– – 1.8 V

––4V

– – 2.0 V

– – 4.0 V

25 –

3–

–

– MHz

.600

(15.24)

C

.060 (1.52)

.173 (4.4)

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

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