NTE5470 查看數據表（PDF） - NTE Electronics

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NTE5470

Silicon Controlled Rectifier (SCR) 5 Amp

NTE Electronics 

Electrical Characteristics: (TC = +25°C unles otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Forward or Reverse Blocking Current

Gate Trigger Current, Continuous DC

Gate Trigger Voltage, Continuous DC

Forward “ON” Voltage

Holding Current

Turn–On Time (td + tr)

Turn–Off Time

IDRM, Rated VDRM or VRRM, TJ = +25°C

–

IRRM Gate Open

TJ = +100°C –

– 10 µA

– 2 mA

IGT VD = 7V, RL = 100Ω,

– 10 30 mA

Note 3

TC = –40°C – – 60 mA

VGT VD = 7V, RL = 100Ω

– 0.75 1.5 V

TC = –40°C – – 2.5 V

TJ = +100°C 0.2 – – V

vTM ITM = 15.7A, Note 4

– 1.4 2.0 V

IH VD = 7V, Gate Open

– 10 30 mA

TC = –40°C – – 60 mA

ton IG = 20mA, IF = 5A, VD = Rated VDRM – 1 – µs

toff IF = 5A, IR = 5A,

VD = Rated VDRM,

dv/dt = 30V/µs

– 15 – µs

TJ = +100°C – 25 – µs

Forward Voltage Application Rate

(Exponential)

dv/dt Gate Open, TJ = +100°C,

VD = Rated VDRM

– 50 – V/µs

Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability,

recommended IGT = 200mA minimum.

Note 4. Pulsed, 1ms Max, Duty Cycle ≤ 1%.

.431

(10.98

Max

Gate

Cathode

.855

(21.7)

Max

.453

(111.5)

Max

.125 (3.17) Max

Anode

10–32 UNF–2A

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