NTE5482 查看數據表（PDF） - NTE Electronics

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NTE5482

Silicon Controlled Rectifier (SCR) 8 Amp

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Forward or Reverse

Blocking Current

IDRM, Rated VDRM or VRRM, TJ = +25°C

IRRM Gate Open

TJ = +100°C

– – 10 µA

– – 2 mA

Gate Trigger Current (Continuous DC)

Gate Trigger Voltage (Continuous DC)

IGT VD = 7V, RL = 100Ω,

Note 3

TC = –40°C

VGT VD = 7V, RL = 100Ω

TC = –40°C

TJ = +100°C

– 10 30 mA

– – 60 mA

– 0.75 1.5 V

– – 2.5 V

0.2 – – V

Forward “ON” Voltage

Holding Current

Turn–On Time (td + tr)

Turn–Off Time

Forward Voltage Application Rate

(Exponential)

vTM ITM = 15.7A, Note 4

– 1.4 2.0 V

IH VD = 7V, Gate Open

– 10 30 mA

TC = –40°C

– – 60 mA

ton IG = 20mA, IF = 5A, VD = Rated VDRM

– 1 – µs

toff IF = 5A, IR = 5A,

dv/dt = 30V/µs

– 15 – µs

TJ = +100°C,

– 25 – µs

VD = Rated VDRM

dv/dt Gate Open, TJ = +100°C,

VD = Rated VDRM

– 50 – V/µs

Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability, rec-

ommended IGT = 200mA minimum.

Note 4. Pulsed, 1ms max., Duty Cycle ≤ 1%.

.431

(10.98

Max

Gate

Cathode

.855

(21.7)

Max

.453

(111.5)

Max

.125 (3.17) Max

Anode

10–32 UNF–2A

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