NTE5620 查看數據表（PDF） - NTE Electronics

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NTE5620

TRIAC 800VRM, 8A, TO220 Full Pack

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Characteristics

Symbol Min

Peak Blocking Current (Either Direction)

(Rated VDRM, TJ = +125°C, Gate Open)

Peak On–State Voltage (Either Direction)

(ITM = 11.3A Peak; Pulse Width = 1 to 2ms,

Duty Cycle < 2%)

IDRM

–

VTM

–

Peak Gate Trigger Current

(Main Terminal Voltage = 12Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

IGT

–

–

–

–

Peak Gate Trigger Voltage

(Main Terminal Voltage = 12Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

(Main Terminal Voltage = Rated VDRM, RL = 10kΩ,

TJ = +125°C)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+)

VGT

–

–

–

–

0.2

0.2

Holding Current (Either Direction)

(Main Terminal Voltage = 24Vdc, Gate Open

IT = 200mA)

Critical Rate of Rise of Off–State Voltage

(Rated VDRM, Exponential Waveform, TJ = +125°C,

Gate Open)

IH

–

dv/dt –

Critical Rate of Rise of Commutation Voltage

dv/dt(c) –

(Rated VDRM, IT(RMS) = 6A, Commutating di/dt = 4.3A/ms,

Gate Unenergized, TC = +80°C)

Typ Max

–2

1.7 2.0

– 50

– 50

– 50

– 75

0.9 2.0

0.9 2.0

1.1 2.0

1.4 2.5

––

––

– 50

100 –

5–

Unit

mA

V

mA

V

mA

V/µs

V/µs

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