NTE889 查看數據表（PDF） - NTE Electronics

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NTE889

Integrated Circuit Dual, Low Power, JFET OP Amplifier

NTE Electronics 

DC Electrical Characteristics: (VCC = +15V, VEE = –15V unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max

Input Offset Voltage

Temperature Coefficient of

Input Offset Voltage

VIO VO = 0,

RS = 50Ω

TA = +25°C

–

TA = 0° to +70°C –

aVIO VO = 0, RS = 50Ω, TA = 0° to +70°C –

3 15

– 20

10 –

Input Offset Current

IIO VCM = 0, VO = 0 TA = +25°C

–

5 200

TA = 0° to +70°C –

–

5

Input Bias Current

IIB VCM = 0, VO = 0 TA = +25°C

– 30 200

TA = 0° to +70°C –

– 10

Common–Mode Input Voltage Range VICR TA = +25°C

– +14.5 +11

TA = 0° to +70°C

–11 –12 –

Maximim Peak Output Voltage Swing VOM RL = 10kΩ, TA = +25°C

±10.0 ±14 –

RL = 10kΩ, TA = 0° to +70°C

±10.0 –

–

Large–Signal Differential Voltage

Amplification

AVD VO = ±10V,

RL ≥ 10kΩ

TA = +25°C

3 58 –

TA = 0° to +70°C 3

–

–

Gain Bandwidth Product

GBW f = 200kHz

–

2

–

Input Resistance

ri

TA = +25°C

– 1012 –

Common–Mode Rejection Ratio

CMRR VCM = VICRmin, VO = 0, RS = 50Ω, 70 84

–

TA = +25°C

Supply Volatge Rejection Ratio

PSRR VCM = 0, VO = 0, RS = 50Ω,

TA = +25°C

70 86 –

Total Power Dissipation (Each Amp) PD No Load, VO = 0, TA = +25°C

– 6.0 7.5

Power Supply Current (Each Amp)

ID No Load, VO = 0, TA = +25°C

– 200 250

Channel Separation

CS f = 10kHz

– 120 –

Slew Rate

Rise Time

Overshoot

SR Vin = –10V to +10V, RL = 10kΩ,

CL = 100pF, AV = +1.0

tr

Vin = 20mV, RL = 10kΩ,

OS CL = 100pF, AV = +1.0

2

6

–

– 0.1 –

– 10 –

Setting Time

tS

VCC = +15V,

to within 10mV

– 1.6 –

VEE = –15V,

AV = –1.0,

RL = 10kΩ,

to within 1.0mV – 2.2 –

VO = 0 to 10V

step

Equivalent Input Noise

en RS = 100Ω, f = 1kHz

– 47 –

Unit

mV

mV

µV/°C

pA

nA

pA

nA

V

V

V

V

V/mV

V/mV

MHz

Ω

dB

dB

mW

µA

dB

V/µs

µs

%

µs

µs

nV/ǨHz

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