OM6056 查看數據表（PDF） - Unspecified
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OM6056 Datasheet PDF : 2 Pages
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Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108
OM6056SB - OM6061SB
3.1
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB Unit
Drain Source Voltage
VDS
100
200
500
600
800
1000
V
Drain Gate Voltage (RGS = 1.0 MΩ)
VDGR
100
200
500
600
800
1000
V
Continuous Drain Current @ TC = 25°C 2
ID
190
105
58
48
34
18
A
Continuous Drain Current @ TC = 100°C 2
ID
82
44
25
19
15
7.5
A
Pulsed Drain Current1
IDM
440
250
130
110
78
42
A
Max. Power Dissipation @ TC = 25°C
PD
570
W
Max. Power Dissipation @ TC = 100°C
PD
245
W
Linear Derating Factor Junction-to-Case
4.35
W/°C
Linear Derating Factor Junction-to-Ambient
.033
W/°C
Operating and Storage Temp. Range
TJ, Tstg
-55 to +150
°C
Lead Temperature (1/16" from case for 10 sec.)
230
°C
Notes: 1. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2. Package Pin Limitation: 100 Amps @ 125°C.
THERMAL RESISTANCE (MAXIMUM) @ TA = 25°C
Junction-to-Case
Junction-to-Ambient (Free Air Operation)
RthJC
.23
RthJA
30
° C/W
° C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol Part No.
Min.
Max. Units
Gate Threshold Voltage
Gate-Source Leakage Current
Off State Drain-Source Leakage
VDS = VGS, ID = 250µA
VGS(th)
All
2.0
VGS = ±20 VDC
IGSS
All
VDS = VDSS x 0.8 TC = 25°C
IDSS
All
VGS = 0V
TC = 125°C
IDSS
All
OM6056SB
100
4.0
V
±100
nA
10
µA
.10
mA
OM6057SB
200
OM6058SB
500
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250 µA
VDSS
V
OM6059SB
600
OM6060SB
800
OM6061SB 1000
OM6056SB
.008
OM6057SB
.018
Static Drain-Source On-Resistance VGS = 10V, ID = ID25 x 0.5
RDS(on)
OM6058SB
OM6059SB
.095
Ω
.140
OM6060SB
.300
OM6061SB
.500
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
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