OP162D 查看數據表（PDF） - Analog Devices
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OP162D Datasheet PDF : 15 Pages
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OP162/OP262/OP462–SPECIFICATIONS
OP162/OP262/OP462
ELECTRICAL CHARACTERISTICS (@ VS = +3.0 V, VCM = 0 V, TA = +25؇C, unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
Long-Term Offset Voltage
IB
IOS
VCM
CMRR
AVO
VOS
OP162G, OP262G, OP462G
50
325
H Grade, –40°C ≤ TA ≤ +125°C
D Grade, –40°C ≤ TA ≤ +125°C
1
0.8
3
5
360 600
± 2.5 ± 25
0
+2
0 V ≤ VCM ≤ +2.0 V,
–40°C ≤ TA ≤ +125°C
70
110
RL = 2 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V
20
RL = 10 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V
20
30
G Grade1
600
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
Output Voltage Swing Low
VOL
IL = 250 µA
IL = 5 mA
IL = 250 µA
IL = 5 mA
2.95 2.99
2.85 2.93
14
50
66
150
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
VS = +2.7 V to +7 V,
–40°C ≤ TA ≤ +125°C
OP162, VOUT = 1.5 V
–40°C ≤ TA ≤ +125°C
OP262, OP462, VOUT = 1.5 V
–40°C ≤ TA ≤ +125°C
60
110
600 700
1
500 650
850
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 kΩ
10
Settling Time
tS
To 0.1%, AV = –1, VO = 2 V Step
575
Gain Bandwidth Product
GBP
15
Phase Margin
φm
59
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.5
Voltage Noise Density
en
f = 1 kHz
9.5
Current Noise Density
in
f = 1 kHz
0.4
NOTES
1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
µV
mV
mV
mV
nA
nA
V
dB
V/mV
V/mV
µV
V
V
mV
mV
dB
µA
mA
µA
µA
V/µs
ns
MHz
Degrees
µV p-p
nV/√Hz
pA/√Hz
REV. C
–3–
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