IC61SF51218D 查看數據表（PDF） - Integrated Circuit Solution Inc
零件编号
产品描述 (功能)
生产厂家
IC61SF51218D
Integrated Circuit Solution Inc
IC61SF51218D Datasheet PDF : 19 Pages
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IC61SF25632T/D IC61SF25636T/D
IC61SF51218T/D
INTERLEAVED BURST ADDRESS TABLE (MODE = VCC or No Connect)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
A1 A0
A1 A0
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS (1)
Symbol Parameter
Value
Unit
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–55 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
–0.5 to VCCQ + 0.5
V
VIN
Voltage Relative to GND for
–0.5 to VCC + 0.5
V
for Address and Control Inputs
VCC
Voltage on Vcc Supply Relatiive to GND
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-nent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions
may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Circuit Solution Inc.
11
SSR020-0A 9/03/2002
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