GLT4160M04-70J3 查看數據表（PDF） - G-Link Technology
零件编号
产品描述 (功能)
生产厂家
GLT4160M04-70J3 Datasheet PDF : 22 Pages
| |||
G-LINK
GLT4160M04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Nov. 2001 (Rev. 2.1)
Parameter
CAS Hold Time for CAS -before- RAS Cycle
WE to RAS precharge time ( CAS Before
RAS refresh )
WE to RAS hold time ( CAS Before RAS
refresh )
Transition Time
Refresh Period (2,048 cycles)
Refresh Period (S-Version)
RAS Pulse Width ( CAS Before RAS Self
refresh )
RAS precharge Time ( CAS Before RAS Self
refresh )
CAS Hold Time ( CAS Before RAS Self
refresh )
Symbol
tCHR
tWRP
60
Min. Max.
10
10
70
Min. Max.
15
10
80
Min. Max.
15
10
Unit
ns
ns
tWRH
10
10
10
ns
tT
tREF
tREFS
tRASS
2 50 2 50 2 50 ns
32
32
32 ms
128
128
128 ms
100
100
100
µs
tRPS
110
130
150
ns
tCHS
-50
-50
-50
ns
Notes
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-8-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
Share Link: 