IXFN340N07 查看數據表（PDF） - IXYS CORPORATION
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IXFN340N07 Datasheet PDF : 5 Pages
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IXFN 340N07
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VDS = 10 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 100A
RG = 1 Ω (External)
VGS = 10 V, VDS = 50 V, ID = 100A
80
98
S
12200
pF
7100
pF
3340
pF
100
ns
95
ns
200
ns
33
ns
490
nC
72
nC
266
nC
0.18 K/W
0.05
K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V =0V
GS
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
340 A
I
Repetitive;
SM
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1360 A
1.2 V
trr
IF = 50A, -di/dt = 100 A/μs, VR = 50V TJ = 25°C
100 200 ns
QRM
1.4
μC
IRM
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
one or moreof the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
5,381,025 6,162,665 6,306,728 B1 6,534,343
5,486,715 6,259,123 B1 6,404,065B1 6,583,505
6,683,344
6,710,405B2
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