I2781AF-08ST 查看數據表（PDF） - ON Semiconductor

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I2781AF-08ST

General Purpose EMI Reduction IC

ON Semiconductor 

P2781/82/84

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

VDD, VIN Voltage on any pin with respect to Ground

-0.5 to +4.6

V

TSTG

Storage temperature

-65 to +125

°C

Ts

Max. Soldering Temperature (10 sec)

260

°C

TJ

Junction Temperature

150

°C

TDV

Static Discharge Voltage (As per JEDEC STD22- A114-B)

2

KV

Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect

device reliability.

Operating Conditions

Parameter

Description

VDD

Supply Voltage

TA

Operating Temperature (Ambient Temperature)

CL

Load Capacitance

CIN

Input Capacitance

Min Max Unit

3.0

3.6

V

-40

+85

°C

15

pF

7

pF

DC Electrical Characteristics

(Test condition: All parameters are measured at room temperature (+25°C) unless otherwise stated.)

Symbol

Parameter

Min

VIL Input low voltage

VSS – 0.3

VIH Input high voltage

2.0

IIL

Input low current

(internal input pull-up resistor on FS0 and FS1)

IIH

Input high current

(internal input pull-up resistor on FS0 and FS1)

IXOL XOUT output low current

IXOH XOUT output high current

VOL Output low voltage (VDD = 3.3V, IOL = 20mA)

VOH

IDD

ICC

VDD

Output high voltage (VDD = 3.3V, IOH = 20mA)

Static supply current

Typical dynamic supply current

(25pF scope probe loading)

Operating voltage

2.5

5.2 at 3MHz

3.0

Typ

Max

Unit

0.8

V

VDD +0.3

V

60

µA

60

µA

10

mA

10

mA

0.4

V

V

3

mA

21.2 at 82MHz mA

3.3

3.6

V

Rev. 2 | Page 5 of 8 | www.onsemi.com

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