IRFF9220 查看數據表（PDF） - Intersil
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IRFF9220 Datasheet PDF : 7 Pages
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IRFF9220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFF9220
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-200
-200
-2.5
-10
±20
20
0.16
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
290
-55 to 150
mJ
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
BVDSS ID = -250µA, VGS = 0V, (Figure 10)
-200
-
-
V
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = -250µA
-2
-
-4
V
Zero Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
-25
µA
-
-250
µA
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
-2.5
-
-
A
Gate to Source Leakage Current
IGSS VGS = ±20V
-
- ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 1.5A, VGS = -10V, (Figures 8, 9)
-
1.0 1.5
Ω
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 1.5A,
(Figure 12)
1
1.8
-
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON) VDD = 0.5 x Rated BVDSS, ID = -2.5A, RGS = 9.1Ω,
-
tr
RL = 38.5Ω for BVDSS = -200V
RL = 28.5Ω for BVDSS = -150V
-
td(OFF) (Figures 17, 18) MOSFET Switching Times are
-
tf
Essentially Independent of Operating
Temperature
-
15
40
ns
25
50
ns
80 120
ns
50
75
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Qg(TOT) VGS = -10V, ID = -2.5A, VDS = 0.8 x Rated BVDSS
-
16
22
nC
IG(REF) = -1.5mA, (Figures 14, 19, 20)
Qgs
Gate Charge is Essentially Independent of
Operating Temperature
-
9
-
nC
Qgd
-
7
-
nC
CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
-
350
-
pF
COSS
-
100
-
pF
CRSS
-
30
-
pF
LD
Measured From the Drain Modified MOSFET
-
5.0
-
nH
Lead, 5mm (0.2in) From Symbol Showing the In-
Header To Center of Die ternal Devices
LS
Measured From the Source Inductances D
Lead, 5mm (0.2in) From
-
15
-
nH
Header to Source Bonding
LD
Pad
G
LS
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
S
-
-
6.25 oC/W
-
-
175 oC/W
4-108
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