VWM350-0075P 查看數據表（PDF） - IXYS CORPORATION
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VWM350-0075P Datasheet PDF : 2 Pages
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VWM 350-0075P
Three phase full bridge
with Trench MOSFETs
VDSS = 75 V
RDSon = 2.3 mΩ
ID25 = 340 A
Preliminary data
L+
T1
T2
T3
G1
G3
G5
S1
S3
S5
L1
L2
T4
T5
T6
L3
G2
G4
G6
S2
S4
S6
L-
MOSFETs T1 - T6
Symbol
VDSS
VGS
ID25
ID80
ID25
ID80
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
TC = 25°C (diode)
TC = 80°C (diode)
Maximum Ratings
75
V
±20
V
340
A
250
A
340
A
250
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
- etc...
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = ID80
2.3
VGSth
VDS = 20 V; ID = 2 mA
2
IDSS
VDS = 75V; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.25
IGSS
VGS = ±20 V; VDS = 0 V
Qg
450
Q
gs
Qgd
VGS= 10 V; VDS = 0.5 • VDSS; ID = 175A
60
170
td(on)
t
r
td(off)
t
f
VGS= 10 V; VDS = 0.5 • VDSS;
ID = 175 A; RG = 2.2 Ω
60
170
320
200
VF
(diode) IF = 175 A; VGS= 0 V
1.1
trr
(diode) IF = 40 A; -di/dt = 200 A/µs; VDS= 30 V
90
RthJC
R
thJH
with heat transfer paste
Ratings and characteristic values are per individual MOSFET
0.51
IXYS reserves the right to change limits, test conditions and dimensions.
3.3 mΩ
4V
0.02 mA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
1.6 V
ns
0.26 K/W
K/W
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
© 2003 IXYS All rights reserved
1-2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
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