HIP5061 查看數據表（PDF） - Intersil
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HIP5061 Datasheet PDF : 20 Pages
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Specifications HIP5061
Absolute Maximum Ratings (Note 1)
Thermal Information
DC Supply Voltage, VDD. . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
DC Supply Current, IDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105mA
DMOS Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 60V
Average DMOS Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
DMOS Source Voltage, VSOURCE, TAB . . . . . . . . . . . . -0.1V to 0.1V
DC Supply Voltage, VG. . . . . . . . . . . . . . . . . . . .-0.3V to VDD + 0.3V
Compensation Pin Current, IVC . . . . . . . . . . . . . . . . . -5mA to 35mA
Voltage at All Other Pins. . . . . . . . . . . . . . . . . . .-0.3V to VDD + 0.3V
Operating Junction Temperature Range. . . . . . . . . . . 0oC to +105oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -55oC to +150oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2 - 2KV
Single Pulse Avalanche Energy Rating, µs (Note 2) . . . EAS 100mJ
Thermal Resistance
Plastic SIP Package . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Package Power Dissipation at +85oC
θJC
2oC/W
(Depends Upon Mounting, Heat Sink and Application) . . . . . 10W
Max. Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . +105oC
(Controlled By Thermal Shutdown Circuit)
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications VDD = VG =12V, VC = 5V, VFB = 5.1V, SOURCE = GND = DRAIN = 0V, TJ = 0oC to +105oC,
Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
DEVICE PARAMETERS
IDD
Quiescent Supply Current
IDD
Operating Supply Current
IVG
Quiescent Current to Gate Driver
IVG
Operating Current to Gate Driver
VDDC
Clamp Voltage
VREF
Reference Voltage
AMPLIFIERS
VDD = VG = 13.2V, VC = 0V,
VFB = 4V
VDD = VG = 13.2V, VC = 8.5V, VFB = 4V
VDD = VG = 13.2V, VC = 0V
VC = 3V
IDD = 100mA
IVC = 0µA, VC = VFB
|IFB|
gm (VFB)
IVCMAX
IVCMAX
AOL
VCMAX
Input Current
VFB Transconductance
IVC/(VFB - VREF)
Maximum Source Current
Maximum Sink Current
Voltage Gain
Short Circuit Recovery Compara-
tor Rising Threshold Voltage
VFB = VREF
/IVC / = 500µA, Note 3
VFB = 4.6V
VFB = 5.6V
/IVC / = 500µA, Note 3
VCHYS
Short Circuit Recovery
Comparator Hysteresis Voltage
IVCOVER
CLOCK
VC Over-Voltage Current
VDD = VG = 10.8V, VC = VCMAX
fq
Internal Clock Frequency
DMOS TRANSISTOR
rDS(ON)
rDS(ON)
IDSS
IDSH
Drain-Source On-State
Resistance
Drain-Source On-State
Resistance
Drain-Source Leakage Current
Average Drain Short Circuit
Current
IDRAIN = 5A, VDD = VG = 10.8V
TJ = +25oC
IDRAIN = 5A, VDD = VG = 10.8V
TJ = +105oC
VDRAIN = 60V
VDRAIN = 5V, Note 4
CDRAIN DRAIN Capacitance
Note 4
MIN
6
-
-
-
13.3
5.0
-
20
-4
1
44
5.4
0.7
0
210
-
-
-
-
-
TYP
12
24
0
1
14
5.1
- 0.85
30
- 1.8
1.8
50
6.6
1.1
10
250
0.15
-
0.5
-
200
MAX
UNITS
18
mA
31
mA
10
µA
2
mA
15
V
5.2
V
0.5
µA
43
mS
-1
mA
4
mA
-
dB
8.9
V
1.8
V
25
mA
290
kHz
0.22
Ω
0.33
Ω
10
µA
5
A
-
pF
7-54
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