P80NF12 查看數據表（PDF） - STMicroelectronics

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P80NF12

N-channel 120V - 0.013Ω- 80A - TO-220 STripFET™ II Power MOSFET

STMicroelectronics 

STP80NF12

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD=80A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A,

di/dt = 100A/µs,

VDD=35V, TJ = 150°C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max Unit

80 A

320 A

1.3 V

155

ns

0.85

µC

11

A

5/12

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