PBSS4350X 查看數據表（PDF） - Philips Electronics
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PBSS4350X Datasheet PDF : 12 Pages
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Philips Semiconductors
50 V, 3 A
NPN low VCEsat (BISS) transistor
Product specification
PBSS4350X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
ICES
collector-emitter cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
RCEsat
VBEsat
VBEon
fT
Cc
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
CONDITIONS
MIN.
VCB = 50 V; IE = 0 A
−
VCB = 50 V; IE = 0 A; Tj = 150 °C
−
VCE = 50 V; VBE = 0 V
−
VEB = 5 V; IC = 0 A
−
VCE = 2 V
IC = 0.1 A
300
IC = 0.5 A
300
IC = 1 A; note 1
300
IC = 2 A; note 1
200
IC = 3 A; note 1
100
IC = 0.5 A; IB = 50 mA
−
IC = 1 A; IB = 50 mA
−
IC = 2 A; IB = 100 mA
−
IC = 2 A; IB = 200 mA; note 1
−
IC = 3 A; IB = 300 mA; note 1
−
IC = 2 A; IB = 200 mA; note 1
−
IC = 2 A; IB = 100 mA
−
IC = 3 A; IB = 300 mA; note 1
−
VCE = 2 V; IC = 1 A
1.1
IC = 100 mA; VCE = 5 V; f = 100 MHz 100
VCB = 10 V; IE = ie = 0 A; f = 1 MHz −
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
−
−
−
−
−
MAX. UNIT
100 nA
50
µA
100 nA
100 nA
−
−
700
−
−
80
mV
160 mV
280 mV
260 mV
370 mV
130 mΩ
1.1 V
1.2 V
−
V
−
MHz
25
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Nov 04
7
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