PBSS4350X 查看數據表（PDF） - Philips Electronics
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PBSS4350X Datasheet PDF : 12 Pages
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Philips Semiconductors
50 V, 3 A
NPN low VCEsat (BISS) transistor
800
handbook, halfpage
hFE
(1)
600
(2)
400
(3)
200
MLE181
010−1
1
VCE = 2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
104
IC (mA)
Fig.6 DC current gain as a function of collector
current; typical values.
Product specification
PBSS4350X
1.2
handbook, halfpage
VBE
(V)
0.8
0.4
MLE180
(1)
(2)
(3)
010−1
1
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
10
102
103
104
IC (mA)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
1
handbook, halfpage
VCEsat
(V)
10−1
10−2
MLE183
(1)
(2)
(3)
1
handbook, halfpage
VCEsat
(V)
10−1
(1)
(2)
10−2
(3)
MLE184
10−3
10−1
1
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
104
IC (mA)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
10−3
10−1
1
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
10
102
103
104
IC (mA)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 04
8
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