PBYL1520CTB 查看數據表（PDF） - Philips Electronics
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PBYL1520CTB Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL1525CT, PBYL1525CTB series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX. UNIT
3 K/W
2.5 K/W
- K/W
- K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 7.5 A; Tj = 150˚C
IF = 7.5 A; Tj = 125˚C
IF = 15 A; Tj = 125˚C
IF = 15 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
-
-
TYP.
0.37
0.39
0.57
0.59
0.2
10
350
MAX. UNIT
0.42 V
0.45 V
0.61 V
0.64 V
5 mA
20 mA
- pF
March 1998
2
Rev 1.000
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