PBYL1520CTB 查看數據表（PDF） - Philips Electronics
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PBYL1520CTB Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL1525CT, PBYL1525CTB series
8 Forward dissipation, PF (W)
Vo = 0.29 V
7 Rs = 0.0213 Ohms
6
5
4
0.2
0.1
3
2
PBYL1525CT Tmb(max) / C 126
129
D = 1.0 132
135
0.5
138
I
tp
141
D
=
tp
T
144
1
147
T
t
0
150
0
2
4
6
8
10
12
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W) PBYL1525CT
5 Vo = 0.29 V
Rs = 0.0213 Ohms
4
1.9
2.2
2.8
4
3
Tmb(max) / C 135
a = 1.57
138
141
2
144
1
147
0
150
0
1
2
3
4
5
6
7
8
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Forward current, IF (A)
10
Tj = 25 C
Tj = 125 C
8
typ
6
max
PBYR1025CTD
4
2
0
0
0.2
0.4
0.6
0.8
1
Forward voltage, VR (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100mAReverse current, IR (A)
PBYR1045CTD
10mA 125 C
100 C
1mA 75 C
50 C
100uA
Tj = 25 C
10uA
0
25
50
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
1000 Junction capacitance, Cd (pF)
PBYR1025CTD
100
1
10
100
Reverse voltage, VR (V)
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYL1025
Fig.6. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
March 1998
3
Rev 1.000
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