PD55008-E(2006) 查看數據表（PDF） - STMicroelectronics

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PD55008-E
(Rev.:2006)

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

STMicroelectronics 

PD55008-E, PD55008S-E

1

Electrical data

1.1

Maximum ratings

Table 1. Absolute maximum ratings (TCASE = 25°C)

Symbol

Parameter

V(BR)DSS

VGS

ID

PDISS

TJ

TSTG

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation (@ TC = 70°C)

Max. operating junction temperature

Storage temperature

1.2

Thermal data

Table 2. Thermal data

Symbol

Parameter

RthJC

Junction - case thermal resistance

Electrical data

Value

Unit

40

V

± 20

V

4

A

52.8

W

165

°C

-65 to +150

°C

Value

1.8

Unit

°C/W

3/28

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