PDMB100B12C2 查看數據表（PDF） - Nihon Inter Electronics
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PDMB100B12C2 Datasheet PDF : 3 Pages
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IGBT MODULE Dual 100A 1200V
Fig.1- Output Characteristics (Typical)
200
VGE=20V
12V
TC=25℃
10V
15V
150
9V
100
8V
50
7V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=125℃
IC=50A
200A
14
100A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000
20000
10000
VGE=0V
f=1MHZ
TC=25℃
Cies
5000
2000
1000
Coes
500
200
100
50 0.1 0.2
Cres
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
PDMB100B12C2
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=25℃
IC=50A
200A
14
100A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=6Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
150
300
450
600
750
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.6
1.4
1.2
tOFF
1
VCC=600V
RG=10Ω
VGE=±15V
TC=25℃
0.8
0.6
tf
0.4
0.2 tON
tr
0
0
25
50
75
100
Collector Current IC (A)
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