PE42422 查看數據表（PDF） - Peregrine Semiconductor Corp.
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PE42422 Datasheet PDF : 13 Pages
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PE42422
Product Specification
Figure 3. Pin Configuration (Top View)
Table 2. Pin Descriptions
Pin No. Pin Name
Description
1
GND
Ground
2
RF21
RF Port 2
3
GND
Ground
4
GND
Ground
5
RFC1
RF Common
6
GND
Ground
7
GND
Ground
8
RF11
RF Port 1
9
DGND Digital Ground
10
V1
Switch control input, CMOS logic level
11
LS
Logic Select, CMOS logic level
12
Paddle
VDD
GND
Supply
Ground for proper device operation
Note 1: Blocking capacitors needed only when non-zero DC voltage present
Table 3. Truth Table
Path
V1
LS
RFC-RF2
1
1
RFC-RF1
0
1
RFC-RF1
1
0
RFC-RF2
0
0
Table 4. Operating Ranges
Parameter
VDD Supply Voltage
IDD Power Supply Current
RFX-RFC input power (50Ω )
Control Voltage High
Control Voltage Low
Operating temperature range
Min Typ Max Units
2.3 3.3
5.5
V
120 200
µA
+32 dBm
1.2 1.5
3.3
V
0
0
0.5
V
-40 +25 +85
°C
Table 5. Absolute Maximum Ratings
Parameter/Conditions
Min
Max
Units
PMAX Input Power1
+32
ESD Voltage HBM2
RF pins to GND
All other pins
ESD Voltage MM, all pins3
4000
1000
200
TST Storage Temperature
-65
+150
Notes: 1. VDD within operating range specified in Table 4
2. HBM ESD Voltage (MIL_STD 883 Method 3015.7)
3. MM ESD Voltage (JEDEC JESD22-A115-A)
dBm
V
V
V
°C
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted
to the limits in the Operating Ranges table.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS® device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS®
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE42422 in the 12-lead 2x2x0.55 mm QFN
package is MSL1.
Document No. DOC-33314-1 | www.psemi.com
©2012-2013 Peregrine Semiconductor Corp. All rights reserved.
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