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PE4150G 查看數據表(PDF) - Peregrine Semiconductor Corp.

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PE4150G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
PE4150
Product Specification
Figure 3. Pin Configuration (Top View)
GND 1
INB 2
INA 3
N/C 4
N/C 5
15 MixBias
14 GND
13 RF_M
12 RF_P
11 GND
Table 2. Pin Descriptions
Pin #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Symbol
GND
INB
INA
N/C
N/C
EN
VDD
IF_P
GND
IF_M
GND
RF_P
RF_M
GND
MixBias
N/C
N/C
VDD
VDD
GND
Function
Ground
Negative LO Input
Positive LO Input
No Connect
No Connect
Enable Pin (active low)
VDD
Positive IF port
Ground
Negative IF port
Ground
Positive RF Input
Negative LO Input
Ground
External Mixer Bias
No Connect
No Connect
VDD
VDD
Ground
The RF and IF pins are differential signals
connected directly to the passive mixer. The LO
input can be differential or single-ended.
Table 3. Operating Ranges
Symbol Parameters/Conditions Min Typ Max Units
VDD
VDD Power Supply
Voltage
TOP
Operating temperature
range
2.9 3.0 3.1
V
-40
85 °C
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE4150
in the 20-lead 4x4 QFN package is MSL1.
Document No. 70-0242-04 www.psemi.com
Table 4. Absolute Maximum Ratings
Symbol Parameters/Conditions Min Max
VDD
Supply Voltage
4.0
VDS
Maximum DC plus peak AC
across drain-source
±3.3
IDS-DC
Maximum DC current across
drain-source
6
Units
°C
V
mA
IDS-AC
Maximum AC current across
drain-source
36
mAp-p
TST
Storage temperature range
Tj
Operating Junction
Temperature
ESD Voltage (HBM,
VESD MIL_STD 883 Method
3015.7)
-65 150
°C
125
°C
1000
V
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted
to the limits in the Operating Ranges table.
Operation between operating range maximum and
absolute maximum for extended periods may reduce
reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Device Description
The PE4150 passive broadband Quad MOSFET
array is designed for use in up-conversion and
down-conversion applications for high performance
systems such as mobile radios, cellular
infrastructure equipment, and STB/CATV systems.
The PE4150 is an ideal mixer core for a wide range
of mixer products, including module level solutions
that incorporate baluns or other single-ended
matching structures enabling three-port operation.
The performance level of this passive mixer is made
possible by the very high linearity afforded by
Peregrine’s UltraCMOS™ process.
©2007-2009 Peregrine Semiconductor Corp. All rights reserved.
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