PESDXS2UAT 查看數據表（PDF） - NXP Semiconductors.

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PESDXS2UAT

Double ESD protection diodes in SOT23 package

NXP Semiconductors. 

NXP Semiconductors

Double ESD protection diodes

in SOT23 package

Product data sheet

PESDxS2UAT series

FEATURES

• Unidirectional ESD protection of up to two lines

• Common-cathode configuration

• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs

• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A

• Ultra-low reverse leakage current: IRM < 700 nA

• ESD protection > 30 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• Data lines

• CAN bus protection.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VALUE

UNIT

VRWM

reverse stand-off 3.3, 5, 12, 15 V

voltage

and 24

Cd

diode capacitance 207, 152, 38, 32 pF

VR = 0 V;

and 23

f = 1 MHz

number of

2

protected lines

PINNING

PIN

1

2

3

DESCRIPTION

anode 1

anode 2

common cathode

DESCRIPTION

Unidirectional double ESD protection diodes in common

cathode configuration in the SOT23 plastic package.

Designed to protect up to two transmission or data lines

against damage from ElectroStatic Discharge (ESD) and

other transients.

MARKING

TYPE NUMBER

PESD3V3S2UAT

PESD5V0S2UAT

PESD12VS2UAT

PESD15VS2UAT

PESD24VS2UAT

MARKING CODE(1)

*7A

*7B

*7C

*7D

*7E

Note

1. * = p : made in Hong Kong.

* = t : made in Malaysia.

* = W : made in China.

1

3

2

001aaa401

1

3

2

sym002

Fig.1 Simplified outline (SOT23) and symbol.

2004 Feb 18

2

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