PESD5V0S2BT 查看數據表（PDF） - NXP Semiconductors.

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PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

NXP Semiconductors. 

NXP Semiconductors

PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

2. Pinning information

Table 2.

Pin

1

2

3

Pinning

Description

cathode 1

cathode 2

double cathode

Simplified outline

3

1

2

Graphic symbol

1

3

2

sym031

3. Ordering information

Table 3. Ordering information

Type number Package

Name Description

PESD5V0S2BT -

plastic surface-mounted package; 3 leads

4. Marking

Table 4. Marking

Type number

PESD5V0S2BT

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Marking code[1]

*G5

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Per diode

PPP

peak pulse power

IPP

peak pulse current

Tj

junction temperature

Tamb

ambient temperature

Tstg

storage temperature

Conditions

tp = 8/20 µs

tp = 8/20 µs

Min

[1][2] -

[1][2] -

-

−65

−65

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform.

[2] Measured from pin 1 to 3 or pin 2 to 3.

Version

SOT23

Max Unit

130

W

12

A

150

°C

+150 °C

+150 °C

PESD5V0S2BT_3

Product data sheet

Rev. 03 — 9 February 2009

© NXP B.V. 2009. All rights reserved.

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