PESD5V0S2BT 查看數據表（PDF） - NXP Semiconductors.
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PESD5V0S2BT Datasheet PDF : 12 Pages
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NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
Min
[1][2] -
-
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or pin 2 to 3.
Max Unit
30
kV
10
kV
Table 7. ESD standards compliance
Standard
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
e−t
50 % IPP; 20 µs
0
0
10
20
30
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
t
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
PESD5V0S2BT_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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