PESD5V0S2BT 查看數據表（PDF） - NXP Semiconductors.
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PESD5V0S2BT Datasheet PDF : 12 Pages
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NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
38
Cd
(pF)
34
30
26
001aaa634
102
IR
IR(85 °C)
10
1
001aaa635
22
0
1
2
3
4
5
VR (V)
Fig 5.
Tamb = 25 °C; f = 1 MHz
Diode capacitance as a function of reverse
voltage; typical values
10−1
75
100
125
150
Tj (°C)
Fig 6.
IR < 1 nA measured at Tamb = 25 °C
Relative variation of reverse current as a
function of junction temperature; typical
values
PESD5V0S2BT_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 12
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