PHB82NQ03LT 查看數據表（PDF） - Philips Electronics
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PHB82NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
peak gate-source voltage
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
25 ≤ Tj ≤ 175 oC
25 ≤ Tj ≤ 175 oC; RGS = 20 kΩ
tp ≤ 50 µs; pulsed; duty cycle = 25 %
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Min
Max Unit
-
30
V
-
30
V
-
±20
V
-
±25
V
-
75
A
-
75
A
-
240
A
-
136
W
−55
+175 °C
−55
+175 °C
-
75
A
-
240
A
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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