PHB82NQ03LT 查看數據表（PDF） - Philips Electronics
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PHB82NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03ai53
40
40
0
0
50
100
150
200
Tmb (oC)
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
RDSon = VDS / ID
102
0
0
50
100
150
200
Tmb (ºC)
Ider = -I-------I--D--------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ai55
tp = 10 µs
100 µs
1 ms
10
DC
10 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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