PHB110NQ06LT 查看數據表（PDF） - Philips Electronics
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PHB110NQ06LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHP/PHB110NQ06LT
N-channel TrenchMOS™ logic level FET
75
VGS = 0 V
IS
(A)
50
03ap98
25
175 °C
Tj = 25 °C
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
6
14 V
4
2
03aq00
VDD = 44 V
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
20
40
60
80
100
QG (nC)
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 25 A; VDD = 14 V and 44 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 13175
Product data
Rev. 01 — 04 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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